A 24-31GHz 28nm FD-SOI CMOS Power Amplifier Supporting 5G NR FR2 64-QAM Signals
Language
EN
Communication dans un congrès
This item was published in
2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2022-10-24, Glasgow. 2022-10p. 1-4
English Abstract
This paper presents a compact high efficiency broadband power amplifier (PA) for 5G mm-wave applications covering both 5G bands n257 and n258 (24.25 - 29.50 GHz). Thanks to its two-stacked power cell architecture and its ...Read more >
This paper presents a compact high efficiency broadband power amplifier (PA) for 5G mm-wave applications covering both 5G bands n257 and n258 (24.25 - 29.50 GHz). Thanks to its two-stacked power cell architecture and its common source driver, the amplifier exhibits a high maximum power added efficiency (PAE) of 43% at 26 GHz for a saturation power of 18.8 dBm. Using 5G modulated signals with PAPRs of 9.9 dB, the power amplifier meets the requirements of the 5G standard with a <sub>avg</sub> of 10 dBm and a <sub>avg</sub> of 15% at 26 GHz. In the n257 and n258 5G New Radio (NR) FR2 bands (24.25 - 29.50GHz), PAEmax and PAE6dB PBO of the PA remain above 32% and 16%, respectively. The amplifier maintains its performance with a VSWR of 1.5:1 with a <sub>max</sub> and <sub>sat</sub> drop of 5% and 0.8 dB, respectively. The PA is implemented in a 28nm FD-SOI CMOS process and only occupies 0.30mm2.Read less <
Keywords
Power measuremen
5G mobile communication
Microprocessors
Power amplifiers
Computer architecture
Peak to average power ratio
New Radio
Integrated circuit
Power amplifier
5G
CMOS
28nm FD-SOI
Capacitive stabilisation