A 24-31GHz 28nm FD-SOI CMOS Power Amplifier Supporting 5G NR FR2 64-QAM Signals
Langue
EN
Communication dans un congrès
Ce document a été publié dans
2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2022-10-24, Glasgow. 2022-10p. 1-4
Résumé en anglais
This paper presents a compact high efficiency broadband power amplifier (PA) for 5G mm-wave applications covering both 5G bands n257 and n258 (24.25 - 29.50 GHz). Thanks to its two-stacked power cell architecture and its ...Lire la suite >
This paper presents a compact high efficiency broadband power amplifier (PA) for 5G mm-wave applications covering both 5G bands n257 and n258 (24.25 - 29.50 GHz). Thanks to its two-stacked power cell architecture and its common source driver, the amplifier exhibits a high maximum power added efficiency (PAE) of 43% at 26 GHz for a saturation power of 18.8 dBm. Using 5G modulated signals with PAPRs of 9.9 dB, the power amplifier meets the requirements of the 5G standard with a <sub>avg</sub> of 10 dBm and a <sub>avg</sub> of 15% at 26 GHz. In the n257 and n258 5G New Radio (NR) FR2 bands (24.25 - 29.50GHz), PAEmax and PAE6dB PBO of the PA remain above 32% and 16%, respectively. The amplifier maintains its performance with a VSWR of 1.5:1 with a <sub>max</sub> and <sub>sat</sub> drop of 5% and 0.8 dB, respectively. The PA is implemented in a 28nm FD-SOI CMOS process and only occupies 0.30mm2.< Réduire
Mots clés
Power measuremen
5G mobile communication
Microprocessors
Power amplifiers
Computer architecture
Peak to average power ratio
New Radio
Integrated circuit
Power amplifier
5G
CMOS
28nm FD-SOI
Capacitive stabilisation
Unités de recherche