A 24-31GHz 28nm FD-SOI CMOS Power Amplifier Supporting 5G NR FR2 64-QAM Signals
| dc.rights.license | open | en_US |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | DIVERREZ, Gwennael | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | KERHERVE, Eric | |
| dc.contributor.author | CATHELIN, Andreia | |
| dc.date.accessioned | 2024-05-21T07:43:38Z | |
| dc.date.available | 2024-05-21T07:43:38Z | |
| dc.date.issued | 2022-10 | |
| dc.date.conference | 2022-10-24 | |
| dc.identifier.issn | 2473-2001 | en_US |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/199943 | |
| dc.description.abstractEn | This paper presents a compact high efficiency broadband power amplifier (PA) for 5G mm-wave applications covering both 5G bands n257 and n258 (24.25 - 29.50 GHz). Thanks to its two-stacked power cell architecture and its common source driver, the amplifier exhibits a high maximum power added efficiency (PAE) of 43% at 26 GHz for a saturation power of 18.8 dBm. Using 5G modulated signals with PAPRs of 9.9 dB, the power amplifier meets the requirements of the 5G standard with a <sub>avg</sub> of 10 dBm and a <sub>avg</sub> of 15% at 26 GHz. In the n257 and n258 5G New Radio (NR) FR2 bands (24.25 - 29.50GHz), PAEmax and PAE6dB PBO of the PA remain above 32% and 16%, respectively. The amplifier maintains its performance with a VSWR of 1.5:1 with a <sub>max</sub> and <sub>sat</sub> drop of 5% and 0.8 dB, respectively. The PA is implemented in a 28nm FD-SOI CMOS process and only occupies 0.30mm2. | |
| dc.language.iso | EN | en_US |
| dc.subject | Power measuremen | |
| dc.subject | 5G mobile communication | |
| dc.subject | Microprocessors | |
| dc.subject | Power amplifiers | |
| dc.subject | Computer architecture | |
| dc.subject | Peak to average power ratio | |
| dc.subject | New Radio | |
| dc.subject | Integrated circuit | |
| dc.subject | Power amplifier | |
| dc.subject | 5G | |
| dc.subject | CMOS | |
| dc.subject | 28nm FD-SOI | |
| dc.subject | Capacitive stabilisation | |
| dc.title.en | A 24-31GHz 28nm FD-SOI CMOS Power Amplifier Supporting 5G NR FR2 64-QAM Signals | |
| dc.type | Communication dans un congrès | en_US |
| dc.identifier.doi | 10.1109/ICECS202256217.2022.9970929 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics] | en_US |
| bordeaux.page | 1-4 | en_US |
| bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.conference.title | 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS) | en_US |
| bordeaux.country | gb | en_US |
| bordeaux.title.proceeding | 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS) | en_US |
| bordeaux.team | CIRCUIT DESIGN-CSH | en_US |
| bordeaux.conference.city | Glasgow | en_US |
| hal.invited | oui | en_US |
| hal.proceedings | oui | en_US |
| hal.conference.end | 2022-10-26 | |
| hal.popular | non | en_US |
| hal.audience | Internationale | en_US |
| hal.export | false | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-10&rft.spage=1-4&rft.epage=1-4&rft.eissn=2473-2001&rft.issn=2473-2001&rft.au=DIVERREZ,%20Gwennael&KERHERVE,%20Eric&CATHELIN,%20Andreia&rft.genre=unknown |
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