Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film
PÉCASTAINGS, Gilles
Laboratoire de Chimie des Polymères Organiques [LCPO]
Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies
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Laboratoire de Chimie des Polymères Organiques [LCPO]
Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies
Language
en
Article de revue
This item was published in
Advanced Electronic Materials. 2018, vol. 4, n° 12, p. 1800204 (8 p.)
Wiley
English Abstract
Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TSAu and investigated by X-ray and UV photoelectron spectroscopies. ...Read more >
Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TSAu and investigated by X-ray and UV photoelectron spectroscopies. Temperature-dependent studies demonstrate that the thermally induced spin crossover behavior is preserved in thin films. A large-area ultrathin switchable spin crossover molecular vertical tunnel junction with top electrodes of the liquid eutectic of gallium and indium, for which the spin-state switching of the films induces a two orders of magnitude change in the tunneling current density flowing through the junction, is reported here. The results on large-area junctions, rationalized by density functional theory calculations, demonstrate the high potential of SCO-based switchable molecular junctions as functional devices.Read less <
English Keywords
tunnel junctions
thin films
spin crossover (SCO)
eutectic gallium indium alloy (EGaIn)
ANR Project
IdEx Bordeaux - ANR-10-IDEX-0003-02/10-IDEX-0003
Origin
Hal imported