Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film
PÉCASTAINGS, Gilles
Laboratoire de Chimie des Polymères Organiques [LCPO]
Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies
< Réduire
Laboratoire de Chimie des Polymères Organiques [LCPO]
Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies
Langue
en
Article de revue
Ce document a été publié dans
Advanced Electronic Materials. 2018, vol. 4, n° 12, p. 1800204 (8 p.)
Wiley
Résumé en anglais
Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TSAu and investigated by X-ray and UV photoelectron spectroscopies. ...Lire la suite >
Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TSAu and investigated by X-ray and UV photoelectron spectroscopies. Temperature-dependent studies demonstrate that the thermally induced spin crossover behavior is preserved in thin films. A large-area ultrathin switchable spin crossover molecular vertical tunnel junction with top electrodes of the liquid eutectic of gallium and indium, for which the spin-state switching of the films induces a two orders of magnitude change in the tunneling current density flowing through the junction, is reported here. The results on large-area junctions, rationalized by density functional theory calculations, demonstrate the high potential of SCO-based switchable molecular junctions as functional devices.< Réduire
Mots clés en anglais
tunnel junctions
thin films
spin crossover (SCO)
eutectic gallium indium alloy (EGaIn)
Project ANR
IdEx Bordeaux - ANR-10-IDEX-0003-02/10-IDEX-0003
Origine
Importé de halUnités de recherche