POGGINI, Lorenzo; GONIDEC, Mathieu; GONZÁLEZ-ESTEFAN, Juan; PÉCASTAINGS, Gilles; GOBAUT, Benoît; ROSA, Patrick

doi:10.1002/aelm.201800204

Metadatos

Mostrar el registro completo del ítem

Licencia de uso del documento

POGGINI, Lorenzo
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

GONIDEC, Mathieu
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

GONZÁLEZ-ESTEFAN, Juan
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

Idioma

Article de revue

Este ítem está publicado en

Advanced Electronic Materials. 2018, vol. 4, n° 12, p. 1800204 (8 p.)

Wiley

Resumen en inglés

Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TSAu and investigated by X-ray and UV photoelectron spectroscopies. Temperature-dependent studies demonstrate that the thermally induced spin crossover behavior is preserved in thin films. A large-area ultrathin switchable spin crossover molecular vertical tunnel junction with top electrodes of the liquid eutectic of gallium and indium, for which the spin-state switching of the films induces a two orders of magnitude change in the tunneling current density flowing through the junction, is reported here. The results on large-area junctions, rationalized by density functional theory calculations, demonstrate the high potential of SCO-based switchable molecular junctions as functional devices.< Leer menos

Palabras clave en inglés

tunnel junctions

thin films

spin crossover (SCO)

eutectic gallium indium alloy (EGaIn)

URI

https://oskar-bordeaux.fr/handle/20.500.12278/19952

DOI

http://dx.doi.org/10.1002/aelm.201800204

Proyecto ANR

IdEx Bordeaux - ANR-10-IDEX-0003-02/10-IDEX-0003

Orígen

Importado de Hal

Centros de investigación

Laboratoire de Chimie des Polymères Organiques (LCPO) - UMR 5629