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InP DHBT test structure optimization towards 110 GHz characterization
Language
EN
Communication dans un congrès
This item was published in
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022-09-19, Milan. 2022-09p. 320-323
English Abstract
In this paper, three different designs of test structures are explored in order to accurately characterize InP DHBTs up to 110 GHz. In particular, a new design, optimized for high frequency measurements while keeping high ...Read more >
In this paper, three different designs of test structures are explored in order to accurately characterize InP DHBTs up to 110 GHz. In particular, a new design, optimized for high frequency measurements while keeping high device density, has been proposed. De-embedding test structures are analyzed and InP DHBT RF figures of merit are extracted for the three designs. Extraction of the maximum oscillation frequency, $f_\textMAX$, confirms the relevance of optimized test structures as well as good performances of the new design.Read less <
Keywords
Performance evaluation
Double heterojunction bipolar transistors
Particle measurements
Frequency measurement
High frequency
III-V semiconductor materials
Probes
Characterization
Millimeter-wave
Double heterojunction bipolar transistor (DHBT)
InP/InGaAs
Indium Phosphide (InP)
European Project
Photonics Public Private Partnership Initiatives under Grant H2020-ICT-2019-2
ANR Project
Investigations des limites technologiques ultimes de l'électronique THz - ANR-16-CE93-0007
