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InP DHBT test structure optimization towards 110 GHz characterization

dc.rights.licenseopenen_US
dc.contributor.authorDAVY, Nil
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDENG, Marina
IDREF: 184622409
dc.contributor.authorNODJIADJIM, Virginie
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorMUKHERJEE, Chhandak
dc.contributor.authorRIET, Muriel
dc.contributor.authorMISMER, Colin
dc.contributor.authorRENAUDIER, Jérémic
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorMANEUX, Cristell
IDREF: 135213584
dc.date.accessioned2024-03-05T09:43:38Z
dc.date.available2024-03-05T09:43:38Z
dc.date.issued2022-09
dc.date.conference2022-09-19
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/188589
dc.description.abstractEnIn this paper, three different designs of test structures are explored in order to accurately characterize InP DHBTs up to 110 GHz. In particular, a new design, optimized for high frequency measurements while keeping high device density, has been proposed. De-embedding test structures are analyzed and InP DHBT RF figures of merit are extracted for the three designs. Extraction of the maximum oscillation frequency, $f_\textMAX$, confirms the relevance of optimized test structures as well as good performances of the new design.
dc.description.sponsorshipInvestigations des limites technologiques ultimes de l'électronique THz - ANR-16-CE93-0007en_US
dc.language.isoENen_US
dc.subjectPerformance evaluation
dc.subjectDouble heterojunction bipolar transistors
dc.subjectParticle measurements
dc.subjectFrequency measurement
dc.subjectHigh frequency
dc.subjectIII-V semiconductor materials
dc.subjectProbes
dc.subjectCharacterization
dc.subjectMillimeter-wave
dc.subjectDouble heterojunction bipolar transistor (DHBT)
dc.subjectInP/InGaAs
dc.subjectIndium Phosphide (InP)
dc.title.enInP DHBT test structure optimization towards 110 GHz characterization
dc.typeCommunication dans un congrèsen_US
dc.identifier.doi10.1109/ESSDERC55479.2022.9947170en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
dc.description.sponsorshipEuropePhotonics Public Private Partnership Initiatives under Grant H2020-ICT-2019-2en_US
bordeaux.page320-323en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.conference.titleESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)en_US
bordeaux.countryiten_US
bordeaux.title.proceedingESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)en_US
bordeaux.teamCIRCUIT DESIGN-M4Cen_US
bordeaux.conference.cityMilanen_US
hal.invitedouien_US
hal.proceedingsouien_US
hal.conference.end2022-09-22
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exportfalse
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-09&rft.spage=320-323&rft.epage=320-323&rft.au=DAVY,%20Nil&DENG,%20Marina&NODJIADJIM,%20Virginie&MUKHERJEE,%20Chhandak&RIET,%20Muriel&rft.genre=unknown


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