DAVY, Nil; DENG, Marina; NODJIADJIM, Virginie; MUKHERJEE, Chhandak; RIET, Muriel; MISMER, Colin; RENAUDIER, Jérémic; MANEUX, Cristell

doi:10.1109/ESSDERC55479.2022.9947170

Laboratoire de l'intégration, du matériau au système [IMS]

NODJIADJIM, Virginie

Langue

Communication dans un congrès

Ce document a été publié dans

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022-09-19, Milan. 2022-09p. 320-323

Résumé en anglais

In this paper, three different designs of test structures are explored in order to accurately characterize InP DHBTs up to 110 GHz. In particular, a new design, optimized for high frequency measurements while keeping high device density, has been proposed. De-embedding test structures are analyzed and InP DHBT RF figures of merit are extracted for the three designs. Extraction of the maximum oscillation frequency, $f_\textMAX$, confirms the relevance of optimized test structures as well as good performances of the new design.< Réduire

Mots clés

Performance evaluation

Double heterojunction bipolar transistors

Particle measurements

Frequency measurement

High frequency

III-V semiconductor materials

Probes

Characterization

Millimeter-wave

Double heterojunction bipolar transistor (DHBT)

InP/InGaAs

Indium Phosphide (InP)

URI

https://oskar-bordeaux.fr/handle/20.500.12278/188589

DOI

http://dx.doi.org/10.1109/ESSDERC55479.2022.9947170

Projet Européen

Photonics Public Private Partnership Initiatives under Grant H2020-ICT-2019-2

Project ANR

Investigations des limites technologiques ultimes de l'électronique THz - ANR-16-CE93-0007

Unités de recherche

IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218

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InP DHBT test structure optimization towards 110 GHz characterization