WHITESIDE, V; MAGILL, B; LUMB, Matthew; ESMAIELPOUR, Hamidreza; MEEKER, M; MUDIYANSELAGE, R; MESSAGER, A; VIJEYARAGUNATHAN, S; MISHIMA, T; SANTOS, M; VURGAFTMAN, I; KHODAPARAST, G; SELLERS, I

doi:10.1088/1361-6641/aae4c3

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Semiconductor Science and Technology. 2019-02-01, vol. 34, n° 2, p. 025005

IOP Publishing

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In this study, detailed temperature dependent simulations for absorption and photogenerated recombination of hot electrons are compared with experimental data for an InAs/AlAsSb multi-quantum well. The simulations describe the actual photoluminescence (PL) observations accurately; in particular, the room temperature e1-hh1 simulated transition energy of 805 meV closely matches the 798 meV transition energy of the experimental PL spectra, a difference of only 7 meV. Likewise, the expected energy separations between local maxima (p1-p2) in the simulated/experimental spectra have a difference of just 2 meV: a simulated energy separation of 31 meV compared to the experimental value of 33 meV. Utilizing a non equilibrium generalized Planck relation, a full spectrum fit enables individual carrier temperatures for both holes and electrons. This results in two very different carrier temperatures for holes and electrons: where the hole temperature, T-h, is nearly equal to the lattice temperature, T-L; while, the electron temperature, T-e, is 'hot' (i.e., T-e > T-L). Also, by fitting the experimental spectra via three different methods a 'hot' carrier temperature is associated with electrons only; all three methods yield similar 'hot' carrier temperatures.< Réduire

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hot carriers

type-II band alignment

valence band states

photovoltaics

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Valence band states in an InAs/AlAsSb multi-quantum well hot carrier absorber

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