Investigating Substrate Network Effects on Si/SiGe HBT Performance Up to 500 GHz
Language
EN
Article de revue
This item was published in
IEEE Transactions on Electron Devices. 2025-09, vol. 72, n° 9, p. 4721-4727
English Abstract
This article explores the impact of the substrate network on the high-frequency performance characteristics of silicon/silicon–germanium (Si/SiGe) heterojunction bipolar transistors (HBTs). The influence of the substrate ...Read more >
This article explores the impact of the substrate network on the high-frequency performance characteristics of silicon/silicon–germanium (Si/SiGe) heterojunction bipolar transistors (HBTs). The influence of the substrate network becomes particularly significant at frequencies above 100 GHz, necessitating advanced measurement and de-embedding techniques. In this study, we employ the advanced 16-term error calibration method to accurately extract the maximum oscillation frequency ( fMAX) up to 500 GHz. This approach allows us to observe second-order effects, such as the impact of substrate network, for the first time. Our findings reveal that the substrate network has significant implications for the optimization of high-frequency Si/SiGe HBTs, especially on fMAX . The study provides insights into substrate-related parasitic effects and proposes strategies to mitigate these effects.Read less <
English Keywords
De-embedding
Fmax
SiGe heterojunction bipolar transistor (HBT)
Substrate