Investigating Substrate Network Effects on Si/SiGe HBT Performance Up to 500 GHz
| dc.rights.license | open | en_US |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | BILLY, Philippine | |
| dc.contributor.author | GUITARD, Nicolas | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | ZIMMER, Thomas
IDREF: 076632598 | |
| dc.contributor.author | GAUTHIER, Alexis | |
| dc.contributor.author | CHEVALIER, Pascal | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | FREGONESE, Sebastien | |
| dc.date.accessioned | 2025-10-13T08:37:25Z | |
| dc.date.available | 2025-10-13T08:37:25Z | |
| dc.date.issued | 2025-09 | |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/207797 | |
| dc.description.abstractEn | This article explores the impact of the substrate network on the high-frequency performance characteristics of silicon/silicon–germanium (Si/SiGe) heterojunction bipolar transistors (HBTs). The influence of the substrate network becomes particularly significant at frequencies above 100 GHz, necessitating advanced measurement and de-embedding techniques. In this study, we employ the advanced 16-term error calibration method to accurately extract the maximum oscillation frequency ( fMAX) up to 500 GHz. This approach allows us to observe second-order effects, such as the impact of substrate network, for the first time. Our findings reveal that the substrate network has significant implications for the optimization of high-frequency Si/SiGe HBTs, especially on fMAX . The study provides insights into substrate-related parasitic effects and proposes strategies to mitigate these effects. | |
| dc.language.iso | EN | en_US |
| dc.subject.en | De-embedding | |
| dc.subject.en | Fmax | |
| dc.subject.en | SiGe heterojunction bipolar transistor (HBT) | |
| dc.subject.en | Substrate | |
| dc.title.en | Investigating Substrate Network Effects on Si/SiGe HBT Performance Up to 500 GHz | |
| dc.type | Article de revue | en_US |
| dc.identifier.doi | 10.1109/ted.2025.3593217 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics] | en_US |
| bordeaux.journal | IEEE Transactions on Electron Devices | en_US |
| bordeaux.page | 4721-4727 | en_US |
| bordeaux.volume | 72 | en_US |
| bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
| bordeaux.issue | 9 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.team | TERAHERTZ | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.inpress | non | en_US |
| bordeaux.import.source | crossref | |
| hal.identifier | hal-05311255 | |
| hal.version | 1 | |
| hal.date.transferred | 2025-10-13T08:37:27Z | |
| hal.popular | non | en_US |
| hal.audience | Internationale | en_US |
| hal.export | true | |
| workflow.import.source | crossref | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=IEEE%20Transactions%20on%20Electron%20Devices&rft.date=2025-09&rft.volume=72&rft.issue=9&rft.spage=4721-4727&rft.epage=4721-4727&rft.au=BILLY,%20Philippine&GUITARD,%20Nicolas&ZIMMER,%20Thomas&GAUTHIER,%20Alexis&CHEVALIER,%20Pascal&rft.genre=article |
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