Twisted-Shaped Millimeter-Wave Hybrid Couplers in 150 nm GaN Technology for 5G Applications
KERHERVE, Eric
Laboratoire de l'intégration, du matériau au système [IMS]
Institut Polytechnique de Bordeaux [Bordeaux INP]
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Laboratoire de l'intégration, du matériau au système [IMS]
Institut Polytechnique de Bordeaux [Bordeaux INP]
KERHERVE, Eric
Laboratoire de l'intégration, du matériau au système [IMS]
Institut Polytechnique de Bordeaux [Bordeaux INP]
< Reduce
Laboratoire de l'intégration, du matériau au système [IMS]
Institut Polytechnique de Bordeaux [Bordeaux INP]
Language
EN
Communication dans un congrès
This item was published in
2025 IEEE/MTT-S International Microwave Symposium - IMS 2025, 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025, 2025-06-15, San Francisco. p. 698-701
IEEE
English Abstract
This paper presents the first implementation of two innovative 90° hybrid couplers in Gallium Nitride (GaN) process designed for 5 G applications. In a very compact design, both couplers target low insertion loss (IL) and ...Read more >
This paper presents the first implementation of two innovative 90° hybrid couplers in Gallium Nitride (GaN) process designed for 5 G applications. In a very compact design, both couplers target low insertion loss (IL) and large fractional bandwidth (FBW1 dB) to replace conventional couplers. The first coupler exhibits minimum insertion loss of 0.44 dB at 22 GHz with a fractional bandwidth of 31%. The second coupler was optimized to reach a minimum insertion loss of 0.28 dB at 25.5 GHz with a fractional bandwidth of 29%, making it suitable for wideband applications. Both couplers perform with an output phase imbalance of 93∘±2∘. Both circuits were designed using 150 nm GaN on SiC GH15 technology from United Monolithic Semiconductors (UMS).Read less <
English Keywords
Balanced architecture
GaN
Hybrid couplers
mmWave
Wideband
5G