Twisted-Shaped Millimeter-Wave Hybrid Couplers in 150 nm GaN Technology for 5G Applications

VIGNESWARAN, Sujeevan; KERHERVE, Eric; DELTIMPLE, Nathalie; MATHIEU, Romain; VIVIEN, Kimon

doi:10.1109/ims40360.2025.11103947

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VIGNESWARAN, Sujeevan
Laboratoire de l'intégration, du matériau au système [IMS]

KERHERVE, Eric
Laboratoire de l'intégration, du matériau au système [IMS]
Institut Polytechnique de Bordeaux [Bordeaux INP]

DELTIMPLE, Nathalie

Laboratoire de l'intégration, du matériau au système [IMS]

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Communication dans un congrès

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2025 IEEE/MTT-S International Microwave Symposium - IMS 2025, 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025, 2025-06-15, San Francisco. p. 698-701

IEEE

Resumen en inglés

This paper presents the first implementation of two innovative 90° hybrid couplers in Gallium Nitride (GaN) process designed for 5 G applications. In a very compact design, both couplers target low insertion loss (IL) and large fractional bandwidth (FBW1 dB) to replace conventional couplers. The first coupler exhibits minimum insertion loss of 0.44 dB at 22 GHz with a fractional bandwidth of 31%. The second coupler was optimized to reach a minimum insertion loss of 0.28 dB at 25.5 GHz with a fractional bandwidth of 29%, making it suitable for wideband applications. Both couplers perform with an output phase imbalance of 93∘±2∘. Both circuits were designed using 150 nm GaN on SiC GH15 technology from United Monolithic Semiconductors (UMS).< Leer menos

Palabras clave en inglés

Balanced architecture

GaN

Hybrid couplers

mmWave

Wideband

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