Reliability Investigation of 0.18mum CMOS for Oilfield Applications

Abstract

We investigated the degradation due to bias temperature instability (BTI) and hot carrier injection (HCI) for 0.18micrometer CMOS (Complementary Metal-Oxide- Semiconductor) under extreme temperature operations (150 deg C and 210 deg C). The transistors have been applied dedicated DC bias and temperature conditions to investigate each intrinsic wear-out mechanism in specific severe environment for oilfield applications. The aging tests have been monitored for up to 1,000 hours. These results are preliminarily used to develop equations reflecting aging laws to be included in commercial software tool for further investigation at logic circuit level.