TRAN, Yen; NOMURA, Toshihiro; CHERCHALI, Mohamed Salim; TASSIN, Claire; DEVAL, Yann; MANEUX, Cristell

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TRAN, Yen
Laboratoire de l'intégration, du matériau au système [IMS]

NOMURA, Toshihiro

CHERCHALI, Mohamed Salim

Langue

Communication dans un congrès

Ce document a été publié dans

SMACD / PRIME 2021; International Conference on SMACD and 16th Conference on PRIME, International Conference on SMACD and 16th Conference on PRIME, 2021-07-19, Online. 2021-09-27

Résumé

We investigated the degradation due to bias temperature instability (BTI) and hot carrier injection (HCI) for 0.18micrometer CMOS (Complementary Metal-Oxide- Semiconductor) under extreme temperature operations (150 deg C and 210 deg C). The transistors have been applied dedicated DC bias and temperature conditions to investigate each intrinsic wear-out mechanism in specific severe environment for oilfield applications. The aging tests have been monitored for up to 1,000 hours. These results are preliminarily used to develop equations reflecting aging laws to be included in commercial software tool for further investigation at logic circuit level.< Réduire

URI

https://oskar-bordeaux.fr/handle/20.500.12278/194984

Unités de recherche

IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218