Baseband TIA Design Using Inversion Coefficient MOSFET Model in CMOS 28nm
Idioma
EN
Communication dans un congrès avec actes
Este ítem está publicado en
2022 20th IEEE Interregional NEWCAS Conference (NEWCAS), 2022 20th IEEE Interregional NEWCAS Conference (NEWCAS), Quebec City, QC, Canada, 2022-06-19, Quebec. 2022-08-05p. 15-19
Resumen en inglés
This paper presents a design methodology to size a transimpedance amplifier for an automotive radar receiver. Based on the Enz-Krummenacher-Vittoz (EKV) MOSFET model, it presents the essential equations to develop a ...Leer más >
Palabras clave
Semiconductor device modeling
MOSFET
Design methodology
Receivers
Mathematical models
Topology
Radar applications
Inversion Coefficient
MOS modeling
TIA
Design Methodology