Baseband TIA Design Using Inversion Coefficient MOSFET Model in CMOS 28nm
Language
EN
Communication dans un congrès avec actes
This item was published in
2022 20th IEEE Interregional NEWCAS Conference (NEWCAS), 2022 20th IEEE Interregional NEWCAS Conference (NEWCAS), Quebec City, QC, Canada, 2022-06-19, Quebec. 2022-08-05p. 15-19
English Abstract
This paper presents a design methodology to size a transimpedance amplifier for an automotive radar receiver. Based on the Enz-Krummenacher-Vittoz (EKV) MOSFET model, it presents the essential equations to develop a ...Read more >
This paper presents a design methodology to size a transimpedance amplifier for an automotive radar receiver. Based on the Enz-Krummenacher-Vittoz (EKV) MOSFET model, it presents the essential equations to develop a small-signal model featuring a limited number of parameters, which can be exploited to quickly explore the different design optimums of a circuit. Post-layout simulations are presented to validate the model and the methodology. The designed TIA presents a gain of 65 dBΩ, a bandwidth of 80 MHz, an input impedance of 74 Ω and input-referred noise of 50 yA2.Hz−1.Read less <
Keywords
Semiconductor device modeling
MOSFET
Design methodology
Receivers
Mathematical models
Topology
Radar applications
Inversion Coefficient
MOS modeling
TIA
Design Methodology