Baseband TIA Design Using Inversion Coefficient MOSFET Model in CMOS 28nm
Langue
EN
Communication dans un congrès avec actes
Ce document a été publié dans
2022 20th IEEE Interregional NEWCAS Conference (NEWCAS), 2022 20th IEEE Interregional NEWCAS Conference (NEWCAS), Quebec City, QC, Canada, 2022-06-19, Quebec. 2022-08-05p. 15-19
Résumé en anglais
This paper presents a design methodology to size a transimpedance amplifier for an automotive radar receiver. Based on the Enz-Krummenacher-Vittoz (EKV) MOSFET model, it presents the essential equations to develop a ...Lire la suite >
Mots clés
Semiconductor device modeling
MOSFET
Design methodology
Receivers
Mathematical models
Topology
Radar applications
Inversion Coefficient
MOS modeling
TIA
Design Methodology