Temperature-dependent electron-lattice thermalization in GaAs
DEL FATTI, N.
Centre de physique moléculaire optique et hertzienne [CPMOH]
Laboratoire de Spectrométrie Ionique et Moléculaire [LASIM]
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Centre de physique moléculaire optique et hertzienne [CPMOH]
Laboratoire de Spectrométrie Ionique et Moléculaire [LASIM]
DEL FATTI, N.
Centre de physique moléculaire optique et hertzienne [CPMOH]
Laboratoire de Spectrométrie Ionique et Moléculaire [LASIM]
< Reduce
Centre de physique moléculaire optique et hertzienne [CPMOH]
Laboratoire de Spectrométrie Ionique et Moléculaire [LASIM]
Language
en
Article de revue
This item was published in
Physical Review B: Condensed Matter and Materials Physics (1998-2015). 1999, vol. 59, n° 7, p. 4576-4579
American Physical Society
English Abstract
Thermalization of hot electron with the lattice is precisely investigated in bulk GaAs in the temperature range 50–300 K using a high-sensitivity two-color femtosecond absorption saturation technique. The results show that ...Read more >
Thermalization of hot electron with the lattice is precisely investigated in bulk GaAs in the temperature range 50–300 K using a high-sensitivity two-color femtosecond absorption saturation technique. The results show that for lattice temperatures larger than 100 K, the photoexcited electron gas eventually thermalizes with the lattice with a characteristic time close to the LO phonon lifetime as a consequence of the nonequilibrium hot-phonon effect. For lower temperatures, the electron-lattice thermalization time is found to be longer than the LO phonon lifetime in agreement with numerical simulations of the coupled carrier-LO phonon dynamics.Read less <
Origin
Hal imported