DEL FATTI, N.; LANGOT, P.; TOMMASI, R.; VALLEE, F.

doi:10.1103/PhysRevB.59.4576

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DEL FATTI, N.
Centre de physique moléculaire optique et hertzienne [CPMOH]
Laboratoire de Spectrométrie Ionique et Moléculaire [LASIM]

LANGOT, P.
Centre de physique moléculaire optique et hertzienne [CPMOH]

TOMMASI, R.

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Physical Review B: Condensed Matter and Materials Physics (1998-2015). 1999, vol. 59, n° 7, p. 4576-4579

American Physical Society

Resumen en inglés

Thermalization of hot electron with the lattice is precisely investigated in bulk GaAs in the temperature range 50–300 K using a high-sensitivity two-color femtosecond absorption saturation technique. The results show that for lattice temperatures larger than 100 K, the photoexcited electron gas eventually thermalizes with the lattice with a characteristic time close to the LO phonon lifetime as a consequence of the nonequilibrium hot-phonon effect. For lower temperatures, the electron-lattice thermalization time is found to be longer than the LO phonon lifetime in agreement with numerical simulations of the coupled carrier-LO phonon dynamics.< Leer menos

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Temperature-dependent electron-lattice thermalization in GaAs

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Centros de investigación