ALTET, J.; GONZALEZ, J. L.; GOMEZ, D.; PERPIÑÀ, X.; GRAUBY, Stéphane; DUFIS, C.; VELLVEHI, M.; MATEO, D.; DILHAIRE, S.; JORDÀ, X.

Métadonnées

Licence d’utilisation du document

ALTET, J.
Electronics Engineering Department

GONZALEZ, J. L.
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]

GOMEZ, D.
Electronics Engineering Department

Langue

Communication dans un congrès

Ce document a été publié dans

18th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2012, 2012-09-25, Budapest. 2012p. 61-66

Résumé en anglais

This paper explains the design decisions and the different measurements we have done in order to characterize the thermal coupling and the characteristics of temperature sensors embedded in a integrated circuit implemented in a CMOS 65nm technology. The circuit contains a 2GHz linear power amplifier, MOS transistors behaving as heat sources and two differential temperature sensors. Temperature measurements performed with the embedded sensor are corroborated with an Infra-Red camera and a laser interferometer used as thermometer. © 2012 CMP.< Réduire

Mots clés en anglais

Temperature sensors

Heating

Temperature measurement

Transducers

Sensitivity

Voltage measurement

Frequency measurement

Origine

Importé de hal

Unités de recherche

Laboratoire Ondes et Matière d'Aquitaine (LOMA) - UMR 5798