Exaltation de la réponse THz ultra-rapide induite optiquement dans une hétérostructure de MoSe2MoS2
Language
en
Article de revue
This item was published in
Optics Express. 2021
Optical Society of America - OSA Publishing
Date
2021English Abstract
THz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the ...Read more >
THz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the MoSe2MoS2 heterobilayer is enhanced many folds when optically excited above the direct band gap energies of the constituting monolayers. The free carriers generated in the heterobilayer evolve with the characteristic times found in each of the two monolayers. Surprisingly, the same enhancement is recorded in the ultrafst THz reflectivity of the heterobilayer when excited below the MoS2 bandgap energy. A mechanism accounting for these observations is proposed.Read less <
English Keywords
THz
2D semiconducting material
Ultrafast charges transfert
Enhanced conductivity
Origin
Hal imported