Exaltation de la réponse THz ultra-rapide induite optiquement dans une hétérostructure de MoSe2MoS2

SEOK, Joon; YOUNG, Hee; KUMAR, Sunil; SINGH, Arvind; NIVEDAN, Anand; KUMAR, Sandeep; TONDUSSON, Marc; DEGERT, Jérôme; OBERLÉ, Jean; YUN, Seok Joon; LEE, Young Hee; FREYSZ, Eric

doi:10.1364/OE.412548

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SEOK, Joon
Sungkyunkwan University [Suwon] [SKKU]

YOUNG, Hee
Sungkyunkwan University [Suwon] [SKKU]

KUMAR, Sunil
Department of Physics [New Delhi] [IIT]

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Ce document a été publié dans

Optics Express. 2021

Optical Society of America - OSA Publishing

Date de soutenance

2021

Résumé en anglais

THz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the MoSe2MoS2 heterobilayer is enhanced many folds when optically excited above the direct band gap energies of the constituting monolayers. The free carriers generated in the heterobilayer evolve with the characteristic times found in each of the two monolayers. Surprisingly, the same enhancement is recorded in the ultrafst THz reflectivity of the heterobilayer when excited below the MoS2 bandgap energy. A mechanism accounting for these observations is proposed.< Réduire

Mots clés en anglais

THz

2D semiconducting material

Ultrafast charges transfert

Enhanced conductivity

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