Contact resistance and shot noise in graphene transistors
Language
en
Article de revue
This item was published in
Physical Review B: Condensed Matter and Materials Physics (1998-2015). 2009-02-15, vol. 79, n° 7, p. 075428 (1-6)
American Physical Society
English Abstract
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent ...Read more >
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.Read less <
ANR Project
Electronic EPR Source - ANR-07-NANO-0011
Origin
Hal imported