Contact resistance and shot noise in graphene transistors
Idioma
en
Article de revue
Este ítem está publicado en
Physical Review B: Condensed Matter and Materials Physics (1998-2015). 2009-02-15, vol. 79, n° 7, p. 075428 (1-6)
American Physical Society
Resumen en inglés
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent ...Leer más >
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.< Leer menos
Proyecto ANR
Electronic EPR Source - ANR-07-NANO-0011
Orígen
Importado de HalCentros de investigación