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Imaging and characterization of conducting ferroelectric domain walls by photoemission electron microscopy
HENTSCHEL, Mario
Materials Science Division [LBNL Berkeley]
4th Physics Institute and Research Center SCoPE
< Reduce
Materials Science Division [LBNL Berkeley]
4th Physics Institute and Research Center SCoPE
Language
en
Article de revue
This item was published in
Applied Physics Letters. 2014, vol. 104, n° 23, p. 232904 (4 p.)
American Institute of Physics
English Abstract
High-resolution X-ray photoemission electron microscopy (X-PEEM) is a well-established method for imaging ferroelectric domain structures. Here, we expand the scope of application of X-PEEM and demonstrate its capability ...Read more >
High-resolution X-ray photoemission electron microscopy (X-PEEM) is a well-established method for imaging ferroelectric domain structures. Here, we expand the scope of application of X-PEEM and demonstrate its capability for imaging and investigating domain walls in ferroelectrics with high-spatial resolution. Using ErMnO3 as test system, we show that ferroelectric domain walls can be visualized based on photo-induced charging effects and local variations in their electronic conductance can be mapped by analyzing the energy distribution of photoelectrons. Our results open the door for non-destructive, contract-free, and element-specific studies of the electronic and chemical structure at domain walls in ferroelectrics.Read less <
Origin
Hal imported