Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors
Language
en
Article de revue
This item was published in
Applied Physics Letters. 2012, vol. 100, n° 5, p. 053308
American Institute of Physics
English Abstract
Surface modifications of the dielectric and the metal of pentacene-based field effect transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap density and pentacene 2D-growth were favored ...Read more >
Surface modifications of the dielectric and the metal of pentacene-based field effect transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap density and pentacene 2D-growth were favored by the nonpolar and low surface energy of octadecyltrichlorosilane-based SAM. This treatment leaded to increased mobility up to 0.4 cm2 V−1 s−1 and no observable hysteresis on transfer curves. Second, reduced hole injection barrier and contact resistance were achieved by fluorinated thiols deposited on gold contacts resulting in an increased mobility up to 0.6 cm2 V−1 s−1. Finally, a high mobility of 2.6 cm2 V−1 s−1 was achieved by cumulative effects of both treatments.Read less <
English Keywords
Charge injection
Contact resistance
Dielectric hysteresis
Dielectric materials
Grain boundaries
Hole mobility
Monolayers
Organic field effect transistors
Organic semiconductors
Self-assembly
Surface energy
Origin
Hal imported