DEVYNCK, Mélanie; TARDY, Pascal; WANTZ, Guillaume; NICOLAS, Yohann; VELLUTINI, Luc; LABRUGÈRE, Christine; HIRSCH, Lionel

doi:10.1063/1.3681791

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DEVYNCK, Mélanie
Laboratoire de l'intégration, du matériau au système [IMS]

TARDY, Pascal
Laboratoire de l'intégration, du matériau au système [IMS]

WANTZ, Guillaume
Laboratoire de l'intégration, du matériau au système [IMS]

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Applied Physics Letters. 2012, vol. 100, n° 5, p. 053308

American Institute of Physics

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Surface modifications of the dielectric and the metal of pentacene-based field effect transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap density and pentacene 2D-growth were favored by the nonpolar and low surface energy of octadecyltrichlorosilane-based SAM. This treatment leaded to increased mobility up to 0.4 cm2 V−1 s−1 and no observable hysteresis on transfer curves. Second, reduced hole injection barrier and contact resistance were achieved by fluorinated thiols deposited on gold contacts resulting in an increased mobility up to 0.6 cm2 V−1 s−1. Finally, a high mobility of 2.6 cm2 V−1 s−1 was achieved by cumulative effects of both treatments.< Leer menos

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Charge injection

Contact resistance

Dielectric hysteresis

Dielectric materials

Grain boundaries

Hole mobility

Monolayers

Organic field effect transistors

Organic semiconductors

Self-assembly

Surface energy

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Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

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