Relaxor properties of sputtered Ba(Ti,Zr)O3 thin films
Langue
en
Article de revue
Ce document a été publié dans
Journal of Physics D: Applied Physics. 2006, vol. vol. 39, n° 6, p. p. 1204-1210
IOP Publishing
Résumé en anglais
Thin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with various substrate temperatures (500–700 °C). All of them display ferroelectric relaxor features at low temperature (T < ...Lire la suite >
Thin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with various substrate temperatures (500–700 °C). All of them display ferroelectric relaxor features at low temperature (T < 200 K), namely a frequency dependent maximum of the dielectric permittivity and dispersion on the low temperature side of the peak. This is the first time that such a behaviour has been evidenced in lead-free sputtered thin films.< Réduire
Mots clés en anglais
Ferroelectric relaxor
Thin films
Inorganic compounds
Oxides
Titanium
Baryum
Zirconium
Origine
Importé de halUnités de recherche