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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorREYMOND, Vincent
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorBIDAULT, Olivier
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMICHAU, Dominique
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPAYAN, Sandrine
dc.date.issued2006
dc.identifier.issn0022-3727
dc.description.abstractEnThin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with various substrate temperatures (500–700 °C). All of them display ferroelectric relaxor features at low temperature (T < 200 K), namely a frequency dependent maximum of the dielectric permittivity and dispersion on the low temperature side of the peak. This is the first time that such a behaviour has been evidenced in lead-free sputtered thin films.
dc.language.isoen
dc.publisherIOP Publishing
dc.subject.enFerroelectric relaxor
dc.subject.enThin films
dc.subject.enInorganic compounds
dc.subject.enOxides
dc.subject.enTitanium
dc.subject.enBaryum
dc.subject.enZirconium
dc.title.enRelaxor properties of sputtered Ba(Ti,Zr)O3 thin films
dc.typeArticle de revue
dc.identifier.doi10.1088/0022-3727/39/6/029
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Physics D: Applied Physics
bordeaux.pagep. 1204-1210
bordeaux.volumevol. 39, n° 6
bordeaux.peerReviewedoui
hal.identifierhal-00078741
hal.version1
hal.popularnon
hal.audienceNon spécifiée
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00078741v1
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