Relaxor properties of sputtered Ba(Ti,Zr)O3 thin films
Idioma
en
Article de revue
Este ítem está publicado en
Journal of Physics D: Applied Physics. 2006, vol. vol. 39, n° 6, p. p. 1204-1210
IOP Publishing
Resumen en inglés
Thin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with various substrate temperatures (500–700 °C). All of them display ferroelectric relaxor features at low temperature (T < ...Leer más >
Thin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with various substrate temperatures (500–700 °C). All of them display ferroelectric relaxor features at low temperature (T < 200 K), namely a frequency dependent maximum of the dielectric permittivity and dispersion on the low temperature side of the peak. This is the first time that such a behaviour has been evidenced in lead-free sputtered thin films.< Leer menos
Palabras clave en inglés
Ferroelectric relaxor
Thin films
Inorganic compounds
Oxides
Titanium
Baryum
Zirconium
Orígen
Importado de HalCentros de investigación