Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor
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Article de revue
Este ítem está publicado en
Solid-State Electronics. 2022-08, vol. 194, p. 108359
Resumen en inglés
In this paper, we present an improved methodology to extract the small-signal electrical equivalent circuit of the parasitic elements using RF test structures for a 3D vertical nanowire transistor technology. The methodology ...Leer más >
Palabras clave en inglés
Test structure
Equivalent circuit
Parasitic components
RF measurements
De-embedding