IMS : Laboratoire de l'Intégration du Matériau au Système

Le laboratoire de l’Intégration du Matériau au Système (IMS, CNRS UMR5218) est rattaché à trois tutelles, le CNRS, l’Université de Bordeaux et Bordeaux INP. Sa stratégie scientifique de développement est principalement centrée dans le domaine des Sciences et de l’Ingénierie des Systèmes, à la convergence des Sciences et Technologies de l’Information et de la Communication (STIC), et des Sciences pour l’Ingénieur (SPI).

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IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218

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Recent Submissions

Broadband Sub-THz Dielectric Waveguides Characterization

A 10-GHz Low Power Class-C VCO with Long-Term Reliability and Tunable Performance in 28 nm FD-SOI for Satellite Communications

IEEE Circuits and Systems Society Tour de France 2024: Celebrating 75 Years of Innovation

Temperature Compensation in FD-SOI Transistors: A Novel Approach with 27% Performance Improvement via Parasitic Diode Biasing

Twisting Effects on X-Shaped Millimeter-Wave Plastic Waveguides

Etude de l’effet d’une torsion d’un guide plastique en croix en onde millimétriques

LASCAS 2024—Solid-State Circuit Society in Latin America

Demonstration of PAE Control in a Wideband CoTS-Based Power Amplifier for 5G Applications

THz coherent source based on light structuration using III-V semiconductor laser technology

Design of a broadband D-Band Power Amplifier

Study and development of an innovative broadband transmission architecture for 5G applications

An integrative approach to simulation model discovery: Combining system theory, process mining and fuzzy logic

MBSE with/out Simulation: State of the Art and Way Forward

Formal verification with HiLLS-specified models: A further step in multi-analysis modeling of complex systems

Formalizing a framework of inference capabilities for Digital Twin engineering

Design of a monitoring environment for manufacturing systems management and optimization

Capturing the dual relationship between simulation models and their context

Celebrating a Decade of Existence: The Bordeaux Electrical Engineering Branch’s 10th Anniversary [Chapters]

Sub-THz Power amplifier design integrated on 28nm FDSOI for 6G applications

Un amplificateur de puissance large bande a PAE controlee en technologie CMOS 28 nm FDSOI pour des applications 5G

Statistics

Collection General Statistics

Typology History

Recent submissions distribution

IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218

Browse by

Recent Submissions

Broadband Sub-THz Dielectric Waveguides Characterization ﻿

A 10-GHz Low Power Class-C VCO with Long-Term Reliability and Tunable Performance in 28 nm FD-SOI for Satellite Communications ﻿

IEEE Circuits and Systems Society Tour de France 2024: Celebrating 75 Years of Innovation ﻿

Temperature Compensation in FD-SOI Transistors: A Novel Approach with 27% Performance Improvement via Parasitic Diode Biasing ﻿

Twisting Effects on X-Shaped Millimeter-Wave Plastic Waveguides ﻿

Etude de l’effet d’une torsion d’un guide plastique en croix en onde millimétriques ﻿

LASCAS 2024—Solid-State Circuit Society in Latin America ﻿

Demonstration of PAE Control in a Wideband CoTS-Based Power Amplifier for 5G Applications ﻿

THz coherent source based on light structuration using III-V semiconductor laser technology ﻿

Design of a broadband D-Band Power Amplifier ﻿

Study and development of an innovative broadband transmission architecture for 5G applications ﻿

An integrative approach to simulation model discovery: Combining system theory, process mining and fuzzy logic ﻿

MBSE with/out Simulation: State of the Art and Way Forward ﻿

Formal verification with HiLLS-specified models: A further step in multi-analysis modeling of complex systems ﻿

Formalizing a framework of inference capabilities for Digital Twin engineering ﻿

Design of a monitoring environment for manufacturing systems management and optimization ﻿

Capturing the dual relationship between simulation models and their context ﻿

Celebrating a Decade of Existence: The Bordeaux Electrical Engineering Branch’s 10th Anniversary [Chapters] ﻿

Sub-THz Power amplifier design integrated on 28nm FDSOI for 6G applications ﻿

Un amplificateur de puissance large bande a PAE controlee en technologie CMOS 28 nm FDSOI pour des applications 5G ﻿

Statistics

Collection General Statistics

Typology History

Recent submissions distribution

Broadband Sub-THz Dielectric Waveguides Characterization

A 10-GHz Low Power Class-C VCO with Long-Term Reliability and Tunable Performance in 28 nm FD-SOI for Satellite Communications

IEEE Circuits and Systems Society Tour de France 2024: Celebrating 75 Years of Innovation

Temperature Compensation in FD-SOI Transistors: A Novel Approach with 27% Performance Improvement via Parasitic Diode Biasing

Twisting Effects on X-Shaped Millimeter-Wave Plastic Waveguides

Etude de l’effet d’une torsion d’un guide plastique en croix en onde millimétriques

LASCAS 2024—Solid-State Circuit Society in Latin America

Demonstration of PAE Control in a Wideband CoTS-Based Power Amplifier for 5G Applications

THz coherent source based on light structuration using III-V semiconductor laser technology

Design of a broadband D-Band Power Amplifier

Study and development of an innovative broadband transmission architecture for 5G applications

An integrative approach to simulation model discovery: Combining system theory, process mining and fuzzy logic

MBSE with/out Simulation: State of the Art and Way Forward

Formal verification with HiLLS-specified models: A further step in multi-analysis modeling of complex systems

Formalizing a framework of inference capabilities for Digital Twin engineering

Design of a monitoring environment for manufacturing systems management and optimization

Capturing the dual relationship between simulation models and their context

Celebrating a Decade of Existence: The Bordeaux Electrical Engineering Branch’s 10th Anniversary [Chapters]

Sub-THz Power amplifier design integrated on 28nm FDSOI for 6G applications

Un amplificateur de puissance large bande a PAE controlee en technologie CMOS 28 nm FDSOI pour des applications 5G