Investigation Into the Moisture Degradation Mechanism of Integrated Stacks Using New Moisture Sensor Design
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EN
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Ce document a été publié dans
2025 IEEE International Reliability Physics Symposium (IRPS), 2025-03-30, Monterey. 2025-03-30p. 1-7
Résumé en anglais
This work presents a modified sensor design for moisture diffusion study of dielectrics within 3D integrated circuits. It allows to track, in addition to the electrical capacitance usually measured, the electrical resistance ...Lire la suite >
This work presents a modified sensor design for moisture diffusion study of dielectrics within 3D integrated circuits. It allows to track, in addition to the electrical capacitance usually measured, the electrical resistance variations with aging. Based on electrical measurements and physical-chemical characterizations, we revealed valuable information on the moisture-induced failure mechanism for Low-k and ULK materials. We have put in evidence that electrical failures within the ULK material are possible under the effect of temperature and humidity. A discussion on the preferential path for Cu diffusion in ULK dielectric is also presented.< Réduire
Mots clés en anglais
Integrated circuit reliability
Failure analysis
Moisture
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