Investigation Into the Moisture Degradation Mechanism of Integrated Stacks Using New Moisture Sensor Design
Language
EN
Communication dans un congrès
This item was published in
2025 IEEE International Reliability Physics Symposium (IRPS), 2025-03-30, Monterey. 2025-03-30p. 1-7
English Abstract
This work presents a modified sensor design for moisture diffusion study of dielectrics within 3D integrated circuits. It allows to track, in addition to the electrical capacitance usually measured, the electrical resistance ...Read more >
This work presents a modified sensor design for moisture diffusion study of dielectrics within 3D integrated circuits. It allows to track, in addition to the electrical capacitance usually measured, the electrical resistance variations with aging. Based on electrical measurements and physical-chemical characterizations, we revealed valuable information on the moisture-induced failure mechanism for Low-k and ULK materials. We have put in evidence that electrical failures within the ULK material are possible under the effect of temperature and humidity. A discussion on the preferential path for Cu diffusion in ULK dielectric is also presented.Read less <
English Keywords
Integrated circuit reliability
Failure analysis
Moisture