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IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218: Dépôts récents

Investigating the degradation mechanisms of moisture on the reliability of integrated low-k stack

Methodology of backside preparation applied on a MRAM to lead a logical investigation with a near-field probe

Moisture absorption and desorption in epoxy mould compounds: Characterization of Fickian and non-Fickian behaviours in complex packages

An atomistic reconstruction of the nanostructure of pyrolitic carbons guided by HRTEM data

Structural features of pyrocarbon atomistic models constructed from transmission electron microscopy images

Tests non destructifs térahertz basés sur une source de corps noir avec réalité augmentée

A computational study of defects and their mobility in bulk and nano-carbons

A Proof-of-Concept of a Multiple-Cell Upsets Detection Method for SRAMs in Space Applications

Interface de détection térahertz par imagerie en realite augmentée

Is virtual reality so user-friendly for non-designers in early design activities? Comparing skills needed to traditional sketching versus virtual reality sketching

Un amplificateur de puissance Doherty basé sur un coupleur hybride inductif résilient VSWR FD-SOI CMOS 3:1 24-31 GHz 28 nm

A 24.25-30.5GHz Fully Integrated SiGe Phase Shifter/VGA/Power Amplifier in 0.13μm BiCMOS Technology for 5G Beamforming Applications

Study of an Avalanche Compensation Mirror for SiGe High Performance Power Amplifiers dedicated to 5G applications

Un coupleur hybride accordable à ondes lentes CMOS FD-SOI 26-44 GHz 28 nm pour application 5G

Basket data-driven approach for omnichannel demand forecasting

Methodology combining industry 4.0 technologies and KPI’s reliability for supply chain performance

Information System Modelling Engineering Design Co-ordination

Redox-active ions unlock substitutional doping in halide perovskites

A Zero Temperature Coefficient Voltage Reference, Stability and Versatility using 28nm FD-SOI Technology

Proposal and Application of Equivalent MOSFET with different temperature coefficient of threshold voltage

IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218: Dépôts récents

Investigating the degradation mechanisms of moisture on the reliability of integrated low-k stack ﻿

Methodology of backside preparation applied on a MRAM to lead a logical investigation with a near-field probe ﻿

Moisture absorption and desorption in epoxy mould compounds: Characterization of Fickian and non-Fickian behaviours in complex packages ﻿

An atomistic reconstruction of the nanostructure of pyrolitic carbons guided by HRTEM data ﻿

Structural features of pyrocarbon atomistic models constructed from transmission electron microscopy images ﻿

Tests non destructifs térahertz basés sur une source de corps noir avec réalité augmentée ﻿

A computational study of defects and their mobility in bulk and nano-carbons ﻿

A Proof-of-Concept of a Multiple-Cell Upsets Detection Method for SRAMs in Space Applications ﻿

Interface de détection térahertz par imagerie en realite augmentée ﻿

Is virtual reality so user-friendly for non-designers in early design activities? Comparing skills needed to traditional sketching versus virtual reality sketching ﻿

Un amplificateur de puissance Doherty basé sur un coupleur hybride inductif résilient VSWR FD-SOI CMOS 3:1 24-31 GHz 28 nm ﻿

A 24.25-30.5GHz Fully Integrated SiGe Phase Shifter/VGA/Power Amplifier in 0.13μm BiCMOS Technology for 5G Beamforming Applications ﻿

Study of an Avalanche Compensation Mirror for SiGe High Performance Power Amplifiers dedicated to 5G applications ﻿

Un coupleur hybride accordable à ondes lentes CMOS FD-SOI 26-44 GHz 28 nm pour application 5G ﻿

Basket data-driven approach for omnichannel demand forecasting ﻿

Methodology combining industry 4.0 technologies and KPI’s reliability for supply chain performance ﻿

Information System Modelling Engineering Design Co-ordination ﻿

Redox-active ions unlock substitutional doping in halide perovskites ﻿

A Zero Temperature Coefficient Voltage Reference, Stability and Versatility using 28nm FD-SOI Technology ﻿

Proposal and Application of Equivalent MOSFET with different temperature coefficient of threshold voltage ﻿