Investigating the degradation mechanisms of moisture on the reliability of integrated low-k stack
Langue
EN
Communication dans un congrès
Ce document a été publié dans
Special issue of 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2023, ESRF 2023, 2023-10-02, TOULOUSE. 2023-11-03, vol. 150, p. 115087
Elsevier BV
Résumé
This study investigates the phenomenon of moisture diffusion within integrated circuits, focusing on low-k and SiCN dielectric materials. The research confirms the main pathway of moisture diffusion occurring through ...Lire la suite >
This study investigates the phenomenon of moisture diffusion within integrated circuits, focusing on low-k and SiCN dielectric materials. The research confirms the main pathway of moisture diffusion occurring through interfaces between materials. The various steps involved in the moisture diffusion mechanism are identified and linked to electrical characterizations, including variations in capacitance, modifications in leakage current behavior, and dielectric breakdown. A modification in the conduction mechanism is observed. The investigation also highlights different types of bonds formed between the dielectrics and moisture based on literature review and baking process. Saturated samples exhibit a partial reversibility after a 250 °C bake but do not fully recover. Nevertheless, reversibility is shown to be dependent on the moisture content reached prior to baking< Réduire
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