BRENDLER, Leonardo H.; LAPUYADE, Herve; DEVAL, Yann; DARRACQ, Frederic; FAUQUET, Frederic; REIS, Ricardo; RIVET, Francois

doi:10.1109/tcsi.2023.3310876

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BRENDLER, Leonardo H.
Laboratoire de l'intégration, du matériau au système [IMS]

LAPUYADE, Herve

Laboratoire de l'intégration, du matériau au système [IMS]

DEVAL, Yann
Laboratoire de l'intégration, du matériau au système [IMS]

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Ce document a été publié dans

IEEE Transactions on Circuits and Systems I: Regular Papers. 2023-09-13p. 1-11

Résumé en anglais

This work details a new way to deal with the Multiple-Cell Upsets (MCU) in SRAM memories for space applications. The method consists of spatially interleaving a memory plan with a network of memory radiation detectors. As a proof-of-concept, a prototype circuit composed of the radiation detectors was manufactured in the 350 nm CMOS Process Technology and tested considering two methodologies: electrically-induced SEU/MCU testing and SEE laser testing. Silicon measurement results confirm the correct operation of the circuit, detecting single and multiple events inserted in different positions of the evaluated detection plans. According to the ratio between the number of data and detection cells, the method proposed can provide a probability of detecting MCUs in a memory plan that can reach close to 100%.< Réduire

Mots clés

Random access memory

Transistors

Power demand

Logic gates

Radiation effects

Prototypes

MOS devices

Mots clés en anglais

Detection cell

Multiple-cell upsets

Radiation hardening

Single-event upsets

SRAM