Chemically Amplified Photoresists for 193-Nm Photolithography: Effect of Molecular Structure and Photonic Parameters on Photopatterning
BROCHON, Cyril
Laboratoire de Chimie des Polymères Organiques [LCPO]
Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies
Laboratoire de Chimie des Polymères Organiques [LCPO]
Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies
HADZIIOANNOU, Georges
Laboratoire de Chimie des Polymères Organiques [LCPO]
Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies
Laboratoire de Chimie des Polymères Organiques [LCPO]
Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies
TIRON, Raluca
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
BANDELIER, Philippe
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
SOURD, Claire
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
< Réduire
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Langue
en
Article de revue
Ce document a été publié dans
Journal of Polymer Science Part A: Polymer Chemistry. 2010, vol. 48, n° 6, p. 1271-1277
Wiley
Résumé en anglais
Next generations of microelectronic devices request further miniaturized systems. In this context, photolithography is a key step and many efforts have been paid to develop new irradiation setup and materials compatible ...Lire la suite >
Next generations of microelectronic devices request further miniaturized systems. In this context, photolithography is a key step and many efforts have been paid to develop new irradiation setup and materials compatible with sub-100 nm resolution. Among other resist platforms, chemically amplified photoresists (CAR) are widely used because of their excellent properties in terms of resolution, sensitivity, and etching resistance. However, low information on the impact of the polymer structure on the lithography performance is available. CAR with well-controlled polymer structures were thus prepared and investigated. In particular, the impact of the polymer structure on the lithographic performance was evaluated. Linear and branched polymers with various molecular weights and polyclispersities were compared. We focused on the dependency of the photosensitivity of the resist with the structural parameters. These results allow further understanding the fundamental phenomena involved by 193-nm irradiation.< Réduire
Mots clés en anglais
resists
photoresists
atomic force microscopy
atom transfer radical polymerization
chemically amplified photoresists
hyperbranched polymer
nanotechnology
photolithography
Origine
Importé de halUnités de recherche