Resonant pairing of excitons in semiconductor heterostructures
ANDREEV, S. V.
National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] [ITMO]
Laboratoire Ondes et Matière d'Aquitaine [LOMA]
Laboratoire de Physique Théorique et Modèles Statistiques [LPTMS]
National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] [ITMO]
Laboratoire Ondes et Matière d'Aquitaine [LOMA]
Laboratoire de Physique Théorique et Modèles Statistiques [LPTMS]
ANDREEV, S. V.
National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] [ITMO]
Laboratoire Ondes et Matière d'Aquitaine [LOMA]
Laboratoire de Physique Théorique et Modèles Statistiques [LPTMS]
< Reduce
National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] [ITMO]
Laboratoire Ondes et Matière d'Aquitaine [LOMA]
Laboratoire de Physique Théorique et Modèles Statistiques [LPTMS]
Language
en
Article de revue
This item was published in
Physical Review B: Condensed Matter and Materials Physics (1998-2015). 2016-10-07, vol. 94, n° 14, p. 140501 (1-5)
American Physical Society
English Abstract
We suggest indirect excitons in two-dimensional semiconductor heterostructures as a platform for the realization of a bosonic analog of the Bardeen-Cooper-Schrieffer superconductor. The quantum phase transition to a ...Read more >
We suggest indirect excitons in two-dimensional semiconductor heterostructures as a platform for the realization of a bosonic analog of the Bardeen-Cooper-Schrieffer superconductor. The quantum phase transition to a biexcitonic gapped state can be controlled in situ by tuning the electric field applied to the structure in the growth direction. The proposed playground should allow one to go to strongly correlated and high-temperature regimes, unattainable with Feshbach resonant atomic gases.Read less <
Origin
Hal imported