High resolution resonant photoluminescence excitation of CdSe/ZnS nanocrystals at low temperatures
Language
en
Article de revue
This item was published in
Applied Physics Letters. 2006-06-01, vol. 88, p. 223110
American Institute of Physics
English Abstract
We present a new technique to perform high resolution resonant photoluminescence excitation of CdSe/ZnS nanocrystals. The method takes advantage of the long photoluminescence decay times (~ 1 Μs) observed in this system ...Read more >
We present a new technique to perform high resolution resonant photoluminescence excitation of CdSe/ZnS nanocrystals. The method takes advantage of the long photoluminescence decay times (~ 1 Μs) observed in this system at liquid helium temperatures. Resonant photoluminescence excitation can be performed using a tunable pulsed excitation and a time-gated detection. Spectral hole burning investigations on an ensemble of CdSe/ZnS nanocrystals lead to homogeneous linewidths of ~100 µeV for the band edge exciton state.Read less <
English Keywords
single nano-object detection
CdSe/ZnS quantum dots
high resolution spectroscopy
spectral hole burning
Origin
Hal imported