DAVID, T.; ARSCOTT, S.; MUNIER, J.M.; DECOOPMAN, Thibaut; AKALIN, Tahsin; MOUNAIX, Patrick; MÉLIQUE, Xavier; VANBÉSIEN, Olivier; BEAUDIN, Gérard; LIPPENS, Didier

doi:10.1109/THZ.2002.1037604

Metadatos

Mostrar el registro completo del ítem

Licencia de uso del documento

DAVID, T.
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

ARSCOTT, S.
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

MUNIER, J.M.
LERMA Cergy [LERMA]

Idioma

Communication dans un congrès

Este ítem está publicado en

Proceedings of the 10th IEEE International Conference on Terahertz Electronics, THz 2002, Proceedings of the 10th IEEE International Conference on Terahertz Electronics, THz 2002, 2002-09-10, Cambridge. 2002p. 113-116

IEEE, Piscataway, NJ, USA

Resumen en inglés

Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial lift-off and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz corresponding to an overall efficiency of 6%. In addition we have observed a 45 GHz 3 dB bandwidth centered around 300 GHz for a constant input power of 70 mW. We also report on the design of a multiplier block in a fin line technology making use of smoothly corrugated tapered sections for mode matching and filtering< Leer menos

Palabras clave en inglés

Substrates

Frequency

Circuits

Diodes

Indium gallium arsenide

Varactors

Bandwidth

Matched filters

Filtering

Millimeter wave devices

Metadatos

Licencia de uso del documento

High performance HBV multipliers monolithically integrated into a host quartz substrate

Idioma

Este ítem está publicado en

Resumen en inglés

Palabras clave en inglés

DOI

Orígen

Centros de investigación