ALTET, J.; RUBIO, A.; SCHAUB, Emmanuel; DILHAIRE, S.; CLAEYS, W.

doi:10.1109/4.896232

Metadatos

Mostrar el registro completo del ítem

Licencia de uso del documento

ALTET, J.
Department of Electronic Engineering

RUBIO, A.
Department of Electronic Engineering

SCHAUB, Emmanuel
Centre de physique moléculaire optique et hertzienne [CPMOH]

Idioma

Article de revue

Este ítem está publicado en

IEEE Journal of Solid-State Circuits. 2001-01, vol. 36, n° 1, p. 81-91

Institute of Electrical and Electronics Engineers

Resumen en inglés

The power dissipated by the devices of a circuit can be construed as a signature of the circuit's performance and state. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements of the silicon die surface via built-in differential temperature sensors. In this paper, dynamic and spatial thermal behavioral characterization of VLSI MOS devices is presented using laser thermoreflectance measurements and on-chip differential temperature sensing circuits. A discussion of the application of built-in differential temperature measurements as an IC test strategy is also presented.< Leer menos

Metadatos

Licencia de uso del documento

Thermal coupling in integrated circuits: Application to thermal testing

Idioma

Este ítem está publicado en

Resumen en inglés

DOI

Orígen

Centros de investigación