ALTET, J.; RUBIO, A.; SCHAUB, Emmanuel; DILHAIRE, S.; CLAEYS, W.

doi:10.1109/4.896232

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ALTET, J.
Department of Electronic Engineering

RUBIO, A.
Department of Electronic Engineering

SCHAUB, Emmanuel
Centre de physique moléculaire optique et hertzienne [CPMOH]

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IEEE Journal of Solid-State Circuits. 2001-01, vol. 36, n° 1, p. 81-91

Institute of Electrical and Electronics Engineers

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The power dissipated by the devices of a circuit can be construed as a signature of the circuit's performance and state. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements of the silicon die surface via built-in differential temperature sensors. In this paper, dynamic and spatial thermal behavioral characterization of VLSI MOS devices is presented using laser thermoreflectance measurements and on-chip differential temperature sensing circuits. A discussion of the application of built-in differential temperature measurements as an IC test strategy is also presented.< Réduire

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Thermal coupling in integrated circuits: Application to thermal testing

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