ElectroStatic Discharge fault localization by laser probing
Language
en
Article de revue
This item was published in
Microelectronics Reliability. 2005-09, vol. 45, n° 9-11, p. 1482-1486
Elsevier
English Abstract
This paper deals with the localization of ElectroStatic Discharge (ESD) failure in digital circuits by thermoelastic laser probing. After ESD simulation on a NAND TTL LS circuit, the device was scanned using an interferometric ...Read more >
This paper deals with the localization of ElectroStatic Discharge (ESD) failure in digital circuits by thermoelastic laser probing. After ESD simulation on a NAND TTL LS circuit, the device was scanned using an interferometric laser probe. In sine wave regime the surface displacement induced by the leakage current was recorded. The heat source acts as a hot spot inducing a thermal expansion in its neighborhood. This expansion, whose magnitude varies from several hundred to a few picometers (10−12m), allows the localization of the leakage region corresponding to the ESD failure areaRead less <
Origin
Hal imported