High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 µm
LAMPIN, Jean-Francois
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
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Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Langue
en
Article de revue
Ce document a été publié dans
Electronics Letters. 2006, vol. 42, n° 15, p. 879-880
IET
Résumé en anglais
The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate ...Lire la suite >
The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth. THz emitter and detector efficiency are strongly dependent on irradiation doses. It was found that equivalent bandwidth and amplitude compared with LTG-GaAs switches excited at 800 nm under the same experimental conditions.< Réduire
Mots clés en anglais
submillimetre wave detectors
III-V semiconductors
submillimetre wave generation
indium compounds
submillimetre wave antennas
Origine
Importé de halUnités de recherche