High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 µm
| hal.structure.identifier | Centre de physique moléculaire optique et hertzienne [CPMOH] | |
| dc.contributor.author | MOUNAIX, Patrick | |
| hal.structure.identifier | Centre de physique moléculaire optique et hertzienne [CPMOH] | |
| dc.contributor.author | TONDUSSON, Marc | |
| hal.structure.identifier | Institut d'électronique fondamentale [IEF] | |
| dc.contributor.author | CHIMOT, Nicolas | |
| hal.structure.identifier | Institut d'électronique fondamentale [IEF] | |
| dc.contributor.author | MANGENEY, Juliette | |
| hal.structure.identifier | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN] | |
| dc.contributor.author | BLARY, Karine | |
| hal.structure.identifier | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN] | |
| dc.contributor.author | LAMPIN, Jean-Francois | |
| dc.date.issued | 2006 | |
| dc.identifier.issn | 0013-5194 | |
| dc.description.abstractEn | The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth. THz emitter and detector efficiency are strongly dependent on irradiation doses. It was found that equivalent bandwidth and amplitude compared with LTG-GaAs switches excited at 800 nm under the same experimental conditions. | |
| dc.language.iso | en | |
| dc.publisher | IET | |
| dc.subject.en | submillimetre wave detectors | |
| dc.subject.en | III-V semiconductors | |
| dc.subject.en | submillimetre wave generation | |
| dc.subject.en | indium compounds | |
| dc.subject.en | submillimetre wave antennas | |
| dc.title.en | High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 µm | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1049/el:20061529 | |
| dc.subject.hal | Sciences de l'ingénieur [physics] | |
| bordeaux.journal | Electronics Letters | |
| bordeaux.page | 879-880 | |
| bordeaux.volume | 42 | |
| bordeaux.issue | 15 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-00162819 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-00162819v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Electronics%20Letters&rft.date=2006&rft.volume=42&rft.issue=15&rft.spage=879-880&rft.epage=879-880&rft.eissn=0013-5194&rft.issn=0013-5194&rft.au=MOUNAIX,%20Patrick&TONDUSSON,%20Marc&CHIMOT,%20Nicolas&MANGENEY,%20Juliette&BLARY,%20Karine&rft.genre=article |
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