High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 µm
LAMPIN, Jean-Francois
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
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Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Idioma
en
Article de revue
Este ítem está publicado en
Electronics Letters. 2006, vol. 42, n° 15, p. 879-880
IET
Resumen en inglés
The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate ...Leer más >
The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth. THz emitter and detector efficiency are strongly dependent on irradiation doses. It was found that equivalent bandwidth and amplitude compared with LTG-GaAs switches excited at 800 nm under the same experimental conditions.< Leer menos
Palabras clave en inglés
submillimetre wave detectors
III-V semiconductors
submillimetre wave generation
indium compounds
submillimetre wave antennas
Orígen
Importado de HalCentros de investigación