GRAUBY, Stéphane; PUYOO, Etienne; RAMPNOUX, Jean-Michel; ROUVIÈRE, Emmanuelle; DILHAIRE, Stefan

doi:10.1021/jp4018822

Metadatos

Licencia de uso del documento

GRAUBY, Stéphane
Laboratoire Ondes et Matière d'Aquitaine [LOMA]

PUYOO, Etienne
Laboratoire Ondes et Matière d'Aquitaine [LOMA]
Laboratoire des Composants pour la Récupération d'Énergies [LCRE]
Institut des Nanotechnologies de Lyon [INL]

RAMPNOUX, Jean-Michel
Laboratoire Ondes et Matière d'Aquitaine [LOMA]

Idioma

Article de revue

Este ítem está publicado en

Journal of Physical Chemistry C. 2013, vol. 117, n° 17, p. 9025-9034

American Chemical Society

Resumen en inglés

We have grown various samples of Si and SiGe nanowires (NWs), either by a classical vapor?liquid?solid (VLS) process or by chemical etching, to measure their thermal conductivity and thus evaluate their efficiency for thermoelectrics applications. To do so, we have chosen a 3ω-Scanning Thermal Microscopy (SThM) imaging technique which is until now the only method able to perform topographical and thermal measurements simultaneously on an assembly of individual NWs, leading to a statistical value of their thermal conductivity. A size effect is clearly observed on Si NWs: 50 nm diameter NWs offer a reduced thermal conductivity in comparison with 200 nm diameter or even larger NWs. On the contrary, the thermal conductivity of SiGe NWs is widely reduced in comparison with the SiGe bulk value, even for large diameters, bigger than Si NWs ones. We discuss our results, comparing them with thermal conductivity values from the literature obtained by other measurement methods or models.< Leer menos

DOI

http://dx.doi.org/10.1021/jp4018822

Proyecto ANR

Etude de l'amplification de la Conduction Thermique dans des Réseaux de Nanoparticules - ANR-06-NANO-0020

Orígen

Importado de Hal

Centros de investigación

Laboratoire Ondes et Matière d'Aquitaine (LOMA) - UMR 5798